HIGH-TEMPERATURE THIN-FILM DIAMOND FIELD-EFFECT TRANSISTOR FABRICATED USING A SELECTIVE GROWTH METHOD

被引：83
|
作者：
GILDENBLAT, GS
GROT, SA
HATFIELD, CW
BADZIAN, AR
机构：
[1] PENN STATE UNIV,DEPT ELECT & COMP ENGN,UNIVERSITY PK,PA 16802
[2] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 02期
关键词：
D O I：
10.1109/55.75696
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Selective growth of boron-doped homoepitaxial diamond films was achieved using sputtered SiO2 as a masking layer. The hole mobility of selectively grown films varied between 210 and 290 cm2/V . s for hole concentration between 1.0 . 10(14) and 6.9 .10(14) cm-3. The new technique was used to fabricate a thin-film diamond field-effect transistor operational at 300-degrees-C. The channel resistance of the device is an exponential function of temperature.
引用
收藏
页码：37 / 39
页数：3
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