HIGH Q METAL STRIP SSBW RESONATORS USING A SAW DESIGN

被引:12
作者
AVRAMOV, ID
机构
[1] Institute of Solid State Physics, 1784 Sofia
关键词
D O I
10.1109/58.63109
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
An experimental study of metal strip surface skimming bulk wave (SSBW) resonators using a surface acoustic wave (SAW) design is presented. Characteristics of SSBW and SAW resonators fabricated with the same photolithographic mask are compared and discussed. High Q low loss SSBW resonators are achieved using a conventional two-port SAW resonator design and taking special care of the distance L between both interdigital transducers (IDT), the metal thickness h/λ (λ — acoustic wavelength) and the finger-to-gap ratio. Best overall performance of the SSBW devices in this study is achieved at L = nλ/2 − λ/4, (compared with L = nλ/2 − λ/8 for SAW resonators), Á/λ = 1.6%, (compared with 2% for SAW) and finger-to-gap ratio close to 1. The best device fabricated shows an unloaded Q of 5820 and an insertion loss of 7.8 dB at 766 MHz. The SSBW resonant frequency shows a stronger dependence on the metal thickness than the SAW one. This problem, however, is readily solved by frequency trimming using a CF4 plasma etching technique. SSBW resonators can be trimmed by 0.2% down in frequency (compared with 0.05% for SAW) without affecting their performance. © 1990, IEEE
引用
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页码:530 / 534
页数:5
相关论文
共 10 条
  • [1] BAGWELL TL, 1987, P IEEE ULTRASON S, V1, P319
  • [2] BAUER RL, 1988, OCT P IEEE ULTR S, V1, P53
  • [3] BROWNING TI, 1977, OCT P IEEE ULTR S, V1, P753
  • [4] CROSS PS, 1979, OCT P IEEE ULTR S, V1, P824
  • [5] DUQUESNOY JY, 1982, OCT P IEEE ULTR S, V1, P57
  • [6] HUEGLI R, 1987, OCT P IEEE ULTR S, V1, P183
  • [7] LAU KF, 1977, OCT P IEEE ULTR S, V1, P996
  • [8] LAU KF, 1983, OCT P IEEE ULTR S, V1, P263
  • [9] LEWIS MF, 1977, P IEEE ULTRASON S, V1, P744
  • [10] MORITA T, 1987, TOYOS TECH B, V37, P1