THE LIFETIME OF ADDED CARRIERS IN INSB

被引：14

作者：

MACKINTOSH, IM

ALLEN, JW

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B | 1955年 / 68卷 / 12期

关键词：

D O I：

10.1088/0370-1301/68/12/301

中图分类号：

Q [生物科学];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：985 / 990

页数：6

共 9 条

[1]

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[2] OPTICAL AND PHOTO-ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE [J].

AVERY, DG ;

GOODWIN, DW ;

LAWSON, WD ;

MOSS, TS .

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[3] ELECTRICAL AND OPTICAL PROPERTIES OF INTERMETALLIC COMPOUNDS .1. INDIUM ANTIMONIDE [J].

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BECKER, JH ;

OSHINSKY, W .

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[4] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

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STRAUSS, AJ ;

ZITTER, RN .

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[6] THE INTERPRETATION OF THE PROPERTIES OF INDIUM ANTIMONIDE [J].

MOSS, TS .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (418) :775-782

[7] PHOTOELECTROMAGNETIC AND PHOTODIFFUSION EFFECTS IN GERMANIUM [J].

MOSS, TS ;

PINCHERLE, L ;

WOODWARD, AM .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (405) :743-752

[8] PHOTON-RADIATIVE RECOMBINATION OF ELECTRONS AND HOLES IN GERMANIUM [J].

VANROOSBROECK, W ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1954, 94 (06) :1558-1560

[9] THE TRANSPORT OF ADDED CURRENT CARRIERS IN A HOMOGENEOUS SEMICONDUCTOR [J].

VANROOSBROECK, W .

PHYSICAL REVIEW, 1953, 91 (02) :282-289

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