CRITICAL OXYGEN PARTIAL-PRESSURE FOR THE INSITU PREPARATION OF HIGH-TC SUPERCONDUCTING THIN-FILMS

被引:25
作者
BORMANN, R [1 ]
NOLTING, J [1 ]
机构
[1] UNIV GOTTINGEN,INST PHYS CHEM,W-3400 GOTTINGEN,GERMANY
来源
PHYSICA C | 1989年 / 162卷
关键词
D O I
10.1016/0921-4534(89)90927-1
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:81 / 82
页数:2
相关论文
共 4 条
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    BORMANN, R
    NOLTING, J
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (21) : 2148 - 2150
  • [2] BORMANN R, IN PRESS
  • [3] HAMMOND RC, IN PRESS
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    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1989, 25 (02) : 2418 - 2421