INFRARED PHOTOLUMINESCENCE OF INTRINSIC INSB

被引：27
作者：
ROWELL, NL
机构：
来源：
INFRARED PHYSICS | 1988年 / 28卷 / 01期
关键词：
D O I：
10.1016/0020-0891(88)90018-8
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：37 / 42
页数：6
相关论文
共 22 条
[1]  
Bebb H B., 1972, SEMICOND SEMIMET, V8, P181, DOI DOI 10.1016/S0080-8784(08)62345-5
[2]   THE REMOVAL OF DETECTOR PORT RADIATION EFFECTS IN POWER TRANSMISSION OR REFLECTION FOURIER-TRANSFORM SPECTROSCOPY [J].
BIRCH, JR ;
NICOL, EA .
INFRARED PHYSICS, 1987, 27 (03) :159-165
[3]  
BOLGOV SS, 1983, SOV PHYS SEMICOND+, V17, P134
[4]  
BRESLER MS, 1983, SOV PHYS SEMICOND+, V17, P755
[5]   PHOTO-LUMINESCENCE AS A DIAGNOSTIC OF SEMICONDUCTORS [J].
DEAN, PJ .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1982, 5 (1-2) :89-174
[6]   SPECTRAL REFLECTANCE MEASUREMENTS USING AN INTEGRATING SPHERE IN THE INFRARED [J].
GINDELE, K ;
KOHL, M ;
MAST, M .
APPLIED OPTICS, 1985, 24 (12) :1757-1760
[7]   CHARACTERIZATION STUDY OF A HGTE-CDTE SUPERLATTICE BY MEANS OF TRANSMISSION ELECTRON-MICROSCOPY AND INFRARED PHOTOLUMINESCENCE [J].
HARRIS, KA ;
HWANG, S ;
BLANKS, DK ;
COOK, JW ;
SCHETZINA, JF ;
OTSUKA, N ;
BAUKUS, JP ;
HUNTER, AT .
APPLIED PHYSICS LETTERS, 1986, 48 (06) :396-398
[8]  
HIRCHFELD T, 1986, APPL SPECTROSC, V40, P133
[9]  
IVANOVOMSKII VI, 1983, SOV PHYS SEMICOND+, V17, P334
[10]  
KAVETSKAYA IV, 1983, JETP LETT+, V38, P76
123