ALUMINA DEPOSITION BY ACTIVATED REACTIVE EVAPORATION

被引：33

作者：

BUNSHAH, RF ^{[1
]}

SCHRAMM, RJ ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT MAT,LOS ANGELES,CA 90024

来源：

THIN SOLID FILMS | 1977年 / 40卷 / JAN期

关键词：

D O I：

10.1016/0040-6090(77)90120-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：211 / 216

页数：6

共 21 条

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[3]

BUNSHAH RF, 1975, Patent No. 1392583

[4]

BUNSHAH RF, 1974, SCI TECHNOLOGY SURFA

[5]

Campbell DS, 1970, HDB THIN FILM TECHNO

[6]

COLEN M, 1975, J VAC SCI TECHNOL, V13, P536

[7] ELECTRICAL PROPERTIES OF EVAPORATED ALUMINUM OXIDE FILMS [J].

DASILVA, EM ;

WHITE, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) :12-15

[8] PRELIMINARY INVESTIGATIONS OF REACTIVELY EVAPORATED ALUMINUM OXIDE FILMS ON SILICON [J].

FERRIEU, E ;

PRUNIAUX, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :1008-+

[9]

HIESINGER L, 1951, FESTCHRIFT 100 JAHRE, P376

[10] A12O3 FILMS PREPARED BY ELECTRON-BEAM EVAPORATION OF HOT-PRESSED A12O3 IN OXYGEN AMBIENT [J].

HOFFMAN, D ;

LEIBOWITZ, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :107-+

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