BASE TRANSPORT DYNAMICS IN A HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：16

作者：

HAYES, JR ^{[1
]}

LEVI, AFJ ^{[1
]}

GOSSARD, AC ^{[1
]}

ENGLISH, JH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 21期

关键词：

D O I：

10.1063/1.97309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1481 / 1483

页数：3

共 8 条

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HAYES, JR ;

GOSSARD, AC ;

WIEGMANN, W .

ELECTRONICS LETTERS, 1984, 20 (19) :766-767

[5] DYNAMICS OF EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN GAAS [J].

HAYES, JR ;

LEVI, AFJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1744-1752

[6] HOT-ELECTRON SPECTROSCOPY [J].

HAYES, JR ;

LEVI, AFJ ;

WIEGMANN, W .

ELECTRONICS LETTERS, 1984, 20 (21) :851-852

[7] HIGH-FREQUENCY CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :214-216

[8]

YOKOYAMA N, 1984, IEDM532 TECHN DIG

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