共 50 条
- [1] FORMATION OF DEFECTS IN GALLIUM-PHOSPHIDE BY LASER IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (07): : 787 - 788
- [2] INTERSTITIAL NITROGEN DEFECTS IN GALLIUM-PHOSPHIDE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (11): : L223 - L225
- [3] THE PHOTOLUMINESCENCE DETERMINATION OF NITROGEN CONCENTRATION IN GALLIUM-PHOSPHIDE VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1984, 25 (03): : 59 - 62
- [4] RADIATIVE RECOMBINATION IN GALLIUM-PHOSPHIDE ISOELECTRONICALLY DOPED WITH NITROGEN SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1375 - 1381
- [7] KINETICS OF THE LUMINESCENCE EMITTED FROM NITROGEN-DOPED N-TYPE GALLIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (02): : 170 - 172
- [8] RADIATION DEFECTS IN GALLIUM-PHOSPHIDE DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1988, (05): : 47 - 50