A GALLIUM-PHOSPHIDE HIGH-TEMPERATURE BIPOLAR JUNCTION TRANSISTOR

被引：12

|

作者：

ZIPPERIAN, TE

DAWSON, LR

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 11期

关键词：

D O I：

10.1063/1.92598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：895 / 897

页数：3

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