EFFECT OF NEUTRON-IRRADIATION ON GAAS1-XPX ELECTROLUMINESCENT DIODES

被引：13

作者：

EPSTEIN, AS

SHARE, S

POLIMADEI, RA

HERZOG, AH

机构：

[1] HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA

[2] MONSANTO CO, ST LOUIS, MO 63166 USA

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 08期

关键词：

D O I：

10.1063/1.1654963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：472 / 474

页数：3

共 50 条

[1] EFFICIENCY DEGRADATION OF GAAS1-XPX ELECTROLUMINESCENT DIODES DUE TO HIGH-ENERGY ELECTRON IRRADIATION
NUESE, CJ
SCHADE, H
HERRICK, D
METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 587 - +
[2] DEFECT CENTERS IN GAAS1-XPX ELECTROLUMINESCENT DIODES DUE TO HIGH-ENERGY ELECTRON IRRADIATION
SCHADE, H
NUESE, CJ
HERRICK, D
JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3783 - &
[3] EPITAXIAL-GROWTH AND CHARACTERIZATION OF PYROLYTIC-GROWN GAAS1-XPX FOR ELECTROLUMINESCENT DIODES
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MINAGAWA, S
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) : 656 - 659
[4] IMPROVED PERFORMANCE OF GAAS1-XPX LASER DIODES
TIETJEN, JJ
OCHS, SA
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02): : 180 - &
[5] POSSIBILITIES OF FREQUENCY OF GUNN DIODES ON GAAS1-XPX
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[6] EFFECT OF NITROGEN DOPING ON GAAS 1-XPX ELECTROLUMINESCENT DIODES
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HERZOG, AH
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APPLIED PHYSICS LETTERS, 1971, 19 (06) : 184 - &
[7] ELECTROLUMINESCENCE OF VAPOR-GROWN GAAS AND GAAS1-XPX DIODES
NUESE, CJ
TIETJEN, JJ
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GOSSENBERGER, HF
TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1968, 242 (03): : 400 - +
[8] DISLOCATIONS IN GAAS1-XPX
STRINGFELLOW, GB
GREENE, PE
JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 502 - +
[9] DISLOCATIONS IN GAAS1-XPX
MADER, S
BLAKESLEE, AE
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1975, 19 (02) : 151 - 162
[10] INFLUENCE OF ANISOTROPIC STRESS ON ELECTRICAL CHARACTERISTICS OF GAAS1-XPX DIODES
FULOP, W
KONIDARIS, S
SOLID-STATE ELECTRONICS, 1976, 19 (04) : 313 - 318

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