DYNAMIC OXYGEN EQUILIBRIUM IN SILICON MELTS DURING CRYSTAL-GROWTH BY THE CZOCHRALSKI TECHNIQUE

被引：60

作者：

CARLBERG, T ^{[1
]}

KING, TB ^{[1
]}

WITT, AF ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 01期

关键词：

D O I：

10.1149/1.2123753

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：189 / 193

页数：5

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