COMPARISON OF INFRARED AND ACTIVATION-ANALYSIS RESULTS IN DETERMINING OXYGEN AND CARBON CONTENT IN SILICON

被引:15
作者
GROSS, C
GAETANO, G
TUCKER, TN
BAKER, JA
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D O I
10.1149/1.2404370
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:926 / &
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共 23 条
[1]  
ALEKSANDROVA GI, 1967, ATOM ENERG, V23, P106
[2]   EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON [J].
BAKER, JA ;
TUCKER, TN ;
MOYER, NE ;
BUSCHERT, RC .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4365-&
[3]  
BALKANSKI M, 1960, CR HEBD ACAD SCI, V251, P1277
[4]  
BARKAS WH, 1964, SP3013 NASA
[5]  
Bonsels W., 1969, Semiconductor silicon, P89
[6]   EXCITATION FUNCTIONS OF SOME REACTIONS OF 6- TO 24-MEV HE3 IONS WITH CARBON AND ALUMINUM [J].
COCHRAN, DRF ;
KNIGHT, JD .
PHYSICAL REVIEW, 1962, 128 (03) :1281-&
[7]  
CZIFFRA P, 1958, UCRL8523
[8]   INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J].
KAISER, W ;
KECK, PH ;
LANGE, CF .
PHYSICAL REVIEW, 1956, 101 (04) :1264-1268
[9]   DETERMINATION OF OXYGEN IN COPPER BY HE-3 ACTIVATION ANALYSIS [J].
LEE, DM ;
STAUFFAC.CV ;
MARKOWIT.SS .
ANALYTICAL CHEMISTRY, 1970, 42 (09) :994-&
[10]   ACTIVATION ANALYSIS FOR OXYGEN AND OTHER ELEMENTS BY HELIUM-3-INDUCED NUCLEAR REACTIONS [J].
MARKOWITZ, SS ;
MAHONY, JD .
ANALYTICAL CHEMISTRY, 1962, 34 (03) :329-&