ION-IMPLANTED SCHOTTKY-BARRIER GATE FIELD-EFFECT TRANSISTOR

被引：2

作者：

MOLINE, RA ^{[1
]}

GIBSON, WC ^{[1
]}

HECK, LD ^{[1
]}

机构：

[1] BELL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 03期

关键词：

D O I：

10.1109/T-ED.1973.17645

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：317 / 320

页数：4

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