CHARACTERIZATION OF THIN-LAYERS IN PROCESSED SILICON

Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA), are routinely used in the analysis of electronic materials. Application of these techniques together provides both light and heavy elemental concentration profiles to a depth of several microns. Examples are given of the analysis of layers of CVD produced Si3N4 and metallised porous silicon using RBS, ERDA and (d, p)-NRA, with elemental depth profiles being extracted to a depth of about 5-mu-m. Computer simulations of (d, p) spectra from carbon, nitrogen and oxygen, illustrating the expected proton distributions, are also presented.