BULK DEEP TRAPS IN ZNS AND THEIR RELATION TO HIGH-FIELD ELECTROLUMINESCENCE

被引：12

作者：

GEOFFROY, A

BRINGUIER, E

机构：

[1] Lab. d'Opt. de la Matiere Condensee, Univ. Pierre et Marie Curie, Paris

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 9A期

关键词：

D O I：

10.1088/0268-1242/6/9A/024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hole traps are evidenced in the operation of both non-hysteretic Mn-doped and undoped ZnS AC-coupled electroluminescent films. A new method based upon the scaling properties of conduction current with respect to frequency is developed which allows an unambiguous detection of trapped space charge.

引用

页码：A131 / A133

页数：3