CHANGES OF OPTICAL REFLECTIVITY (1.8-EVTO2.2-EV) INDUCED BY 40-KEV ANTIMONY ION BOMBARDMENT OF SILICON

被引：20

作者：

HART, RR

MARSH, OJ

机构：

[1] Hughes Research Laboratories, Malibu

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 07期

关键词：

D O I：

10.1063/1.1652789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the fractional change in the optical reflectivity of silicon in the 1.8-2.2 eV photon energy band as a function of 40-keV antimony ion dose (1011-1015 Sb/cm2 at various implant temperatures (- 160-405°C). Approximate agreement is found between the change of reflectivity and previous measurements of lattice disorder as determined by backscattering of 1-MeV He ions. © 1969 The American Institute of Physics.

引用

页码：225 / &

共 5 条

[1] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING
DAVIES, JA
DENHARTO.J
ERIKSSON, L
MAYER, JW
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &
[2] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE
ERIKSSON, L
DAVIES, JA
JOHANSSON, NG
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +
[3] ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN 1-EV TO 6-EV REGION
KURTIN, S
SHIFRIN, GA
MCGILL, TC
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (07) : 223 - &
[4] INFLUENCE OF TEMPERATURE AND CHANNELING ON ION-BOMBARDMENT DAMAGE IN SI
NELSON, RS
MAZEY, DJ
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 689 - &
[5] TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN SI BY 40 KEV SB IONS
PICRAUX, ST
WESTMORE.JE
MAYER, JW
HART, RR
MARSH, OJ
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (01) : 7 - &

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