DEFECT REDUCTION EFFECTS IN GAAS ON SI SUBSTRATES BY THERMAL ANNEALING

被引：179

作者：

YAMAGUCHI, M

YAMAMOTO, A

TACHIKAWA, M

ITOH, Y

SUGO, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 23期

关键词：

D O I：

10.1063/1.100257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2293 / 2295

页数：3

共 8 条

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[2]

ALJASSIM MM, 1988, 1988 MAT RES SOC SPR

[3] DISLOCATION VELOCITIES IN GAAS [J].

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OTSUKA, N .

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[5]

ISHIDA K, 1987, JPN J APPL PHYS, V26, pL1141

[6] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[7] CROSSHATCH PATTERNS IN GAAS FILMS ON SI SUBSTRATES DUE TO THERMAL STRAIN IN ANNEALING PROCESSES [J].

NISHIOKA, T ;

ITOH, Y ;

YAMAMOTO, A ;

YAMAGUCHI, M .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1928-1930

[8]

SHIMIZU M, 1986, J JPN ASS CRYST GROW, V13, P253

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