A STUDY OF THE ELECTRICAL AND INTERFACIAL PROPERTIES OF SPUTTERED TI/SI AND SPUTTERED TISI2/SI SCHOTTKY BARRIERS

被引：18

作者：

DEBOSSCHER, W

VANMEIRHAEGHE, RL

DELAERE, A

LAFLERE, WH

CARDON, F

机构：

[1] Rijksuniversiteit Gent, Ghent, Belg, Rijksuniversiteit Gent, Ghent, Belg

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 05期

关键词：

D O I：

10.1016/0038-1101(88)90049-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：945 / 951

页数：7

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