TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER CAPTURE AND EJECTION PROPERTIES OF DEEP TRAPS IN SEMICONDUCTORS .1. THEORETICAL RESULTS

被引：70
作者：
PASSLER, R
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1978年 / 85卷 / 01期
关键词：
D O I：
10.1002/pssb.2220850122
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：203 / 215
页数：13
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