TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER CAPTURE AND EJECTION PROPERTIES OF DEEP TRAPS IN SEMICONDUCTORS .1. THEORETICAL RESULTS

被引：70
作者：
PASSLER, R
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1978年 / 85卷 / 01期
关键词：
D O I：
10.1002/pssb.2220850122
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：203 / 215
页数：13
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共 59 条
[1]  
ALEKSEEVA VG, 1967, RADIOTEKH ELEKTRON, V12, P2077
[2]  
Besfamil'naya V. A., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P21
[3]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[4]   RECOMBINATION MECHANISMS [J].
BONCH-BRUEVICH, VL ;
LANDSBERG, EG .
PHYSICA STATUS SOLIDI, 1968, 29 (01) :9-+
[5]   RELATIONSHIP BETWEEN CAPTURE COEFFICIENT AND CAPTURE CROSS-SECTION - AVERAGE VELOCITY OF A MAXWELLIAN DISTRIBUTION OF CARRIERS IN A MEDIUM WITH AN ANISOTROPIC EFFECTIVE MASS TENSOR [J].
CROWELL, CR .
APPLIED PHYSICS, 1976, 9 (01) :79-81
[6]  
Curie D., 1963, LUMINESCENCE CRYSTAL
[7]   ENERGY GAP LAW FOR RADIATIONLESS TRANSITIONS IN LARGE MOLECULES [J].
ENGLMAN, R ;
JORTNER, J .
MOLECULAR PHYSICS, 1970, 18 (02) :145-+
[8]   TEMPERATURE-DEPENDENCE OF GOLD ACCEPTOR ENERGY-LEVEL IN SILICON [J].
ENGSTROM, O ;
GRIMMEISS, HG .
APPLIED PHYSICS LETTERS, 1974, 25 (07) :413-415
[9]  
Glinchuk K.D., 1969, AKTUALNYE VOPROSY FI, P99
[10]  
HAUG A, 1970, THEORETISCHE FESTKOR, V2
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