EFFECTS OF INTERACTION OF SUBSTRATE, DEPOSIT AND VECTOR GAS DURING EPITAXIS OF ZNSE ON GAAS

被引：10

作者：

CHEVRIER, J ^{[1
]}

ETIENNE, D ^{[1
]}

SOONCKINDT, L ^{[1
]}

BRESSE, JF ^{[1
]}

BOUGNOT, G ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLIDES,F-34060 MONTPELLIER,FRANCE

来源：

关键词：

D O I：

10.1016/0022-0248(77)90351-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：309 / 316

页数：8

共 21 条

[1] EPITAXIAL GROWTH OF ZNSE ON GAAS
BACZEWSK.A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) : 577 - &
[2] BJERKELAND H, 1972, PHYS NORV, V6, P139
[3] LUMINESCENCE IN HIGHLY CONDUCTIVE N-TYPE ZNSE
BOULEY, JC
BLANCONNIER, P
HERMAN, A
GED, P
HENOC, P
NOBLANC, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3549 - 3555
[4] BUBE RH, 1968, PHYS REV, V110, P2077
[5] Carslaw HS., 1965, HEAT CONDUCTION
[6] HETERO-EPITAXY OF ZNSE ON GAAS BY OPEN TUBE TRANSPORT
CHEVRIER, J
GALIBERT, G
ETIENNE, D
BOUGNOT, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 28 (01) : 109 - 116
[7] CHEVRIER J, 1971, THESIS MONTPELLIER
[8] PAIR SPECTRA AND EDGE EMISSION IN ZINC SELENIDE
DEAN, PJ
MERZ, JL
[J]. PHYSICAL REVIEW, 1969, 178 (03): : 1310 - &
[9] OPTICAL-PROPERTIES OF ZNSE HETEROJUNCTIONS ON GAAS
ETIENNE, D
BOUGNOT, G
[J]. THIN SOLID FILMS, 1976, 35 (03) : 351 - 362
[10] PHOTOLUMINESCENCE OF ZINC SELENIDE
ETIENNE, D
ALLEGRE, J
CHEVRIER, J
BOUGNOT, G
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (01): : 279 - 286