MICROSTRUCTURAL CHARACTERIZATION OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR

[1] STUDY OF BURIED SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6169 - 6175

[2] Das K., 1983, Microelectronics Journal, V14, P88, DOI 10.1016/S0026-2692(83)80089-5

[3] FUNG CD, 1983, P S SILICON NITRIDE, P403

[4] FURUKARA S, 1985, SEMICONDUCTOR INSULA

[5] HIGH-QUALITY SILICON ON INSULATOR STRUCTURES FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED NITROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 952 - 954

[6] SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) : 292 - 297

[7] HEMMENT PLF, 1984, MATER RES SOC S P, V33, P41

[8] KAJIMA K, 1976, J CHEM PHYS, V65, P2668

[9] LAM HW, 1984, MATER RES SOC S P, V33

[10] LILIENTAL Z, 1984, MATER RES SOC S P, V25, P525

[1] STUDY OF BURIED SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6169 - 6175

[2] Das K., 1983, Microelectronics Journal, V14, P88, DOI 10.1016/S0026-2692(83)80089-5

[3] FUNG CD, 1983, P S SILICON NITRIDE, P403

[4] FURUKARA S, 1985, SEMICONDUCTOR INSULA

[5] HIGH-QUALITY SILICON ON INSULATOR STRUCTURES FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED NITROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 952 - 954

[6] SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) : 292 - 297

[7] HEMMENT PLF, 1984, MATER RES SOC S P, V33, P41

[8] KAJIMA K, 1976, J CHEM PHYS, V65, P2668

[9] LAM HW, 1984, MATER RES SOC S P, V33

[10] LILIENTAL Z, 1984, MATER RES SOC S P, V25, P525