A new rectifier structure, called Trench MOS Barrier Schottky (TMBS) rectifier, is proposed and demonstrated by modeling and fabrication to have excellent characteristics. Two-dimensional numerical simulations have demonstrated coupling between the charge in the N- drift region and the metal on the trench sidewalls resulting in an improved electric field distribution. For epitaxial layer doping of 1 x 10(17) cm(-3), simulations show that break-down voltages of three times the plane parallel breakdown can be achieved with low leakage current. The measured on-state voltage drops for the devices fabricated using 0.5 mu m technology at 60 and 300 A/cm(2) were 0.2 and 0.28 V, respectively. Due to smaller drift region resistances, TMBS rectifiers can be operated at large current densities (similar to 300 A/cm(2)) resulting in small evice sizes.
