SELECTIVE TRILAYER DEPOSITION PROCESS FOR FABRICATING NB/AL-ALOX/NB JOSEPHSON TUNNEL-JUNCTIONS

被引：12
作者：
MONACO, R [1 ]
OLIVA, A [1 ]
机构：
[1] UNIV SALERNO,DIPARTIMENTO FIS,I-84081 SALERNO,ITALY
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 22期
关键词：
D O I：
10.1063/1.111371
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High quality Nb/Al-AlOx/Nb Josephson tunnel junctions have been fabricated using a novel process named the selective trilayer deposition process. The junction is formed on a patterned Nb underlayer through the lift-off deposition of a Nb/Al-AlOx/Nb trilayer. Anodization then provides the insulation between the underlayer and the wiring layer. We show that this easy and simple process is particularly advantageous for the fabrication of many vertically stacked tunnel junctions.
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页码：3042 / 3044
页数：3
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