ANGULAR-DEPENDENCE OF THE MAGNETORESISTIVITY OF PD2SI

被引：3
作者：
LABORDE, O
GOTTLIEB, U
MADAR, R
机构：
[1] SERV NATL CHAMPS INTENSES,F-38042 GRENOBLE 9,FRANCE
[2] ECOLE NATL SUPER PHYS GRENOBLE,INST NATL POLYTECH GRENOBLE,MAT & GENIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 1994年 / 95卷 / 5-6期
关键词：
D O I：
10.1007/BF00754717
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present the magnetoresistivity, at high Magnetic field measured on single crystals of Pd2Si of very good quality. The magnetoresistance depends on the orientation of field and current directions relative to the crystallographic axis. It shows that this silicide behaves like a compensated metal (i.e. equal numbers of electrons and holes) with open orbits along the main crystallographic directions.
引用
收藏
页码：835 / 848
页数：14
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