TUNNELING TO TRAPS IN INSULATORS

被引：199

作者：

LUNDSTROM, I ^{[1
]}

SVENSSON, C ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 12期

关键词：

D O I：

10.1063/1.1661067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5045 / 5047

页数：3

共 12 条

[1]

ABRAMOWITZ M, 1965, HDB MATH FUNCTIONS, P319

[2] THEORY OF TUNNELING INTO INTERFACE STATES [J].

FREEMAN, LB ;

DAHLKE, WE .

SOLID-STATE ELECTRONICS, 1970, 13 (11) :1483-+

[3] METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS [J].

FROHMANB.D .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1207-+

[4] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

FROHMANB.D ;

LENZLINGER, M .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+

[5]

KANE EO, 1969, TUNNELING PHENOMENA, P5

[6]

LUNDKVIST L, UNPUBLISHED

[7] PROPERTIES OF MNOS STRUCTURES [J].

LUNDSTRO.KI ;

SVENSSON, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :826-&

[8]

MERZBACHER E, 1961, QUANTUM MECHANICS, P209

[9] MEMORY BEHAVIOR OF AN MNS CAPACITOR [J].

PAO, HC ;

OCONNELL, M .

APPLIED PHYSICS LETTERS, 1968, 12 (08) :260-&

[10] THEORY OF THIN-OXIDE MNOS MEMORY TRANSISTOR [J].

SVENSSON, C ;

LUNDSTROM, I .

ELECTRONICS LETTERS, 1970, 6 (20) :645-+

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