Study of InAs/GaAs(001) nanoisland growth process by in-situ and real-time X-ray diffraction

被引：0

作者：

Takahasi, Masamitu ^{[1
]}

Kaizu, Toshiyuki ^{[1
]}

Mizuki, Jun'ichiro ^{[1
]}

机构：

[1] Japan Atom Energy Res Inst, Synchrotron Radiat Res Ctr, 1-1-1 Koto, Mikazuki, Hyogo 6795148, Japan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2006年 / 4卷 / 426-430期

关键词：

X-ray scattering; diffraction; and reflection; Growth; Gallium arsenide; Indium arsenide; Nano-particles; quantum dots; and supra-molecules;

D O I：

10.1380/ejssnt.2006.426

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A monitoring technique for molecular beam epitaxial growth of InAs/GaAs(001) nanoislands is presented. With the help of a combination of synchrotron radiation and a two-dimensional X-ray detector, X-ray diffraction intensity mappings in the reciprocal space have been measured during growth at a rate of 9.6 s per frame. This method provides information on strain distribution and height of Stranski-Krastanov islands under the in situ condition. Because the use of X-rays is not hindered by ambient pressure, this technique is suitable for industry-oriented applications such as organometallic vapor-phase epitaxy as well.

引用

页码：426 / 430

页数：5

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