A COMPARISON OF RADIATION AND HOT-ELECTRON-INDUCED DAMAGES IN MOS CAPACITORS WITH RAPID THERMALLY NITRIDED THIN-GATE OXIDES

被引：4

作者：

JOSHI, AB

LO, GQ

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 10期

关键词：

D O I：

10.1016/0038-1101(91)90096-H

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an investigation of the degradation caused by ionizing radiation exposure and Fowler-Nordheim current injection in MOS capacitors with rapid thermally nitrided thin-gate oxides. The effect of nitridation conditions on the extent of the degradation was studied. It was observed that the damage caused by ionizing radiation and constant-current stressing are strongly dependent on the nitridation temperature and duration. Also, this dependence is different for the two cases. These observations are explained using some defect generation models and structural changes in oxide due to nitridation.

引用

页码：1023 / 1028

页数：6

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