GAINASP-INP DH LASERS WITH A CHEMICALLY ETCHED FACET

被引：14
作者：
IGA, K
POLLACK, MA
MILLER, BI
MARTIN, RJ
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 10期
关键词：
D O I：
10.1109/JQE.1980.1070360
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1044 / 1047
页数：4
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