PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY

被引:195
作者
MALIK, RJ
AUCOIN, TR
ROSS, RL
BOARD, K
WOOD, CEC
EASTMAN, LF
机构
[1] UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
[2] CORNELL UNIV,DEPT ELECT ENGN,ITHACA,NY 14853
关键词
D O I
10.1049/el:19800594
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:836 / 837
页数:2
相关论文
共 4 条
[1]   NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J].
ALLYN, CL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1980, 36 (05) :373-376
[2]   CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J].
SHANNON, JM .
SOLID-STATE ELECTRONICS, 1976, 19 (06) :537-543
[3]   MAJORITY-CARRIER CAMEL DIODE [J].
SHANNON, JM .
APPLIED PHYSICS LETTERS, 1979, 35 (01) :63-65
[4]  
WOOD CEC, 1980, J APPL PHYS, V51