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PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
被引:195
作者
:
MALIK, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
MALIK, RJ
AUCOIN, TR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
AUCOIN, TR
ROSS, RL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
ROSS, RL
BOARD, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
BOARD, K
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
WOOD, CEC
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
EASTMAN, LF
机构
:
[1]
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
[2]
CORNELL UNIV,DEPT ELECT ENGN,ITHACA,NY 14853
来源
:
ELECTRONICS LETTERS
|
1980年
/ 16卷
/ 22期
关键词
:
D O I
:
10.1049/el:19800594
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:836 / 837
页数:2
相关论文
共 4 条
[1]
NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY
[J].
ALLYN, CL
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h-index:
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ALLYN, CL
;
GOSSARD, AC
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GOSSARD, AC
;
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WIEGMANN, W
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APPLIED PHYSICS LETTERS,
1980,
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(05)
:373
-376
[2]
CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
[J].
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机构:
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[J].
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←
1
→
共 4 条
[1]
NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY
[J].
ALLYN, CL
论文数:
0
引用数:
0
h-index:
0
ALLYN, CL
;
GOSSARD, AC
论文数:
0
引用数:
0
h-index:
0
GOSSARD, AC
;
WIEGMANN, W
论文数:
0
引用数:
0
h-index:
0
WIEGMANN, W
.
APPLIED PHYSICS LETTERS,
1980,
36
(05)
:373
-376
[2]
CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
[J].
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
SHANNON, JM
.
SOLID-STATE ELECTRONICS,
1976,
19
(06)
:537
-543
[3]
MAJORITY-CARRIER CAMEL DIODE
[J].
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill, Surrey
SHANNON, JM
.
APPLIED PHYSICS LETTERS,
1979,
35
(01)
:63
-65
[4]
WOOD CEC, 1980, J APPL PHYS, V51
←
1
→