EFFECT OF EMITTER OXIDE-WINDOW-EDGE SHAPE IN COMPUTER-SIMULATION STUDIES OF ION-IMPLANTED TRANSISTORS

被引：1

|

作者：

HENDERSO.JC

SCARBROU.RJ

SILVESTE.R

机构：

来源：

ELECTRONICS LETTERS | 1970年 / 6卷 / 19期

关键词：

D O I：

10.1049/el:19700433

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：623 / &

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