COMBINED SCANNING (EBIC) AND TRANSMISSION ELECTRON-MICROSCOPIC INVESTIGATIONS OF DISLOCATIONS IN SEMICONDUCTORS

被引：50
作者：
BLUMTRITT, H
GLEICHMANN, R
HEYDENREICH, J
JOHANSEN, H
机构：
[1] Institut Für Festkörperphysik Und Elektronenmikroskopie, Akademie Der Wissenschaften Der Ddr
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 55卷 / 02期
关键词：
D O I：
10.1002/pssa.2210550231
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Statements on the electrical activity of dislocations with respect to the recombination of charge carriers are given, obtained by a combined application of scanning electron microscopy (EBIC technique) and transmission electron microscopy. The results indicate that the strength of recombination at dislocations of different type mainly depends on the degree of their decoration with impurity atoms. Model calculations carried out for special imaging conditions give the possibility to determine the minority carrier diffusion length from the half‐width of SEM/EBIC dislocation profiles and allow statements on the recombination‐active regions around defects. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
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页码：611 / 620
页数：10
相关论文
共 14 条
[1]  
BLUMTRITT H, 1977, ULTRAMICROSCOPY, V2, P405
[2]   ELECTRICAL RECOMBINATION BEHAVIOR AT DISLOCATIONS IN GALLIUM-PHOSPHIDE AND SILICON [J].
BOOKER, GR ;
OURMAZD, A ;
DARBY, DB .
JOURNAL DE PHYSIQUE, 1979, 40 :19-21
[3]   INVESTIGATION OF SEMICONDUCTOR-MATERIALS AND DEVICES BY HIGH-VOLTAGE STEM TECHNIQUES [J].
COSSLETT, VE ;
FATHY, D ;
SPARROW, TG ;
VALDRE, U .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (10) :1177-1184
[4]   OBSERVATIONS OF INDIVIDUAL DISLOCATIONS AND OXYGEN PRECIPITATES IN SILICON WITH A SCANNING ELECTRON BEAM METHOD [J].
CZAJA, W ;
PATEL, JR .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) :1476-&
[5]  
DONOLATO C, 1978, OPTIK, V52, P19
[6]   CONTRAST AND RESOLUTION OF SEM CHARGE-COLLECTION IMAGES OF DISLOCATIONS [J].
DONOLATO, C .
APPLIED PHYSICS LETTERS, 1979, 34 (01) :80-81
[7]  
EVERHART TE, 1971, J APPL PHYSICS, V42, P5857
[8]   HIGH-VOLTAGE ELECTRON-MICROSCOPY AND SCANNING ELECTRON-MICROSCOPY (EBIC MODE) OF THE SAME DISLOCATION [J].
HEYDENREICH, J ;
BLUMTRITT, H ;
GLEICHMANN, R ;
JOHANSEN, H .
JOURNAL DE PHYSIQUE, 1979, 40 :23-26
[9]   SEM OBSERVATION AND CONTRAST MECHANISM OF STACKING-FAULTS IN AN EPITAXIAL SILICON LAYER [J].
KATO, T ;
KOYAMA, H ;
MATSUKAWA, T ;
SHIMIZU, R .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3732-3737
[10]   ELECTRICAL-ACTIVITY OF EPITAXIAL STACKING-FAULTS [J].
MARCUS, RB ;
ROBINSON, M ;
SHENG, TT ;
HASZKO, SE ;
MURARKA, SP ;
KATZ, LE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) :425-430
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