INFLUENCE OF MELT PREPARATION ON RESIDUAL IMPURITY CONCENTRATION IN SEMI-INSULATING LEC GAAS

被引：19

作者：

NISHIO, J

TERASHIMA, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90058-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：605 / 608

页数：4

共 12 条

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[9]

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[10] LEC GROWTH TECHNIQUE FOR HOMOGENEOUS UNDOPED SEMI-INSULATING GAAS SINGLE-CRYSTALS WITH INSITU MELT PURIFICATION PROCESS [J].

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