ACCEPTOR STATES AT THE SI-SIO2 INTERFACE GENERATED BY UV AND THEIR EFFECT ON ELECTRON-MOBILITY

被引：9
作者：
KASSABOV, J
DIMITROV, D
GRUEVA, A
机构：
来源：
SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 01期
关键词：
D O I：
10.1016/0038-1101(88)90085-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：49 / 51
页数：3
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