APPLICATIONS OF RESONANT-TUNNELING FIELD-EFFECT TRANSISTORS

被引：10

作者：

WOODWARD, TK ^{[1
]}

MCGILL, TC ^{[1
]}

CHUNG, HF ^{[1
]}

BURNHAM, RD ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO,CA 94304

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 03期

关键词：

SEMICONDUCTOR DEVICES; FIELD EFFECT - Applications;

D O I：

10.1109/55.2062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Flip-flop and frequency-doubling operations are demonstrated, using a simple circuit that combines a resistor with a three-terminal negative-resistance device. The device is a series integration of a resonant-tunneling heterostructure with a field-effect transistor. Results, obtained at 77 K, are presented for two samples that were grown by metalorganic chemical vapor deposition.

引用

页码：122 / 124

页数：3

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