SHORT CAVITY GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY DRY ETCHING

被引：21

作者：

YUASA, T ^{[1
]}

YAMADA, T ^{[1
]}

ASAKAWA, K ^{[1
]}

SUGATA, S ^{[1
]}

ISHII, M ^{[1
]}

UCHIDA, M ^{[1
]}

机构：

[1] NEC CORP,OPTOELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 16期

关键词：

D O I：

10.1063/1.97630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1007 / 1009

页数：3

共 10 条

[1] GAAS AND ALGAAS ANISOTROPIC FINE PATTERN ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J].

ASAKAWA, K ;

SUGATA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :402-405

[2] SHORT-CAVITY GAALAS LASER BY WET CHEMICAL ETCHING [J].

BOUADMA, N ;

RIOU, J ;

BOULEY, JC .

ELECTRONICS LETTERS, 1982, 18 (20) :879-880

[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].

COLDREN, LA ;

IGA, K ;

MILLER, BI ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683

[4] CALCULATED THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS [J].

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7211-7214

[5] HIGH-QUANTUM-EFFICIENCY LOW-THRESHOLD MICROCLEAVED ALXGA1-XAS LASERS [J].

LEVINE, BF ;

VANDERZIEL, JP ;

LOGAN, RA ;

BETHEA, CG .

ELECTRONICS LETTERS, 1982, 18 (16) :690-691

[6] LOW-THRESHOLD MBE GAAS/ALGAAS QUANTUM WELL LASERS WITH DRY-ETCHED MIRRORS [J].

MANNOH, M ;

YUASA, T ;

ASAKAWA, K ;

SHINOZAKI, K ;

ISHII, M .

ELECTRONICS LETTERS, 1985, 21 (17) :769-770

[7] PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY MOLECULAR-BEAM EPITAXY [J].

MANNOH, M ;

YUASA, T ;

NARITSUKA, S ;

SHINOZAKI, K ;

ISHII, M .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :728-731

[8] GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING [J].

MERZ, JL ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3503-3509

[9] DRY-ETCHED-CAVITY PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS [J].

YUASA, T ;

MANNOH, M ;

ASAKAWA, K ;

SHINOZAKI, K ;

ISHII, M .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :748-750

[10]

YUASA T, UNPUB

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