SHORT CAVITY GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY DRY ETCHING

被引：21

作者：

YUASA, T ^{[1
]}

YAMADA, T ^{[1
]}

ASAKAWA, K ^{[1
]}

SUGATA, S ^{[1
]}

ISHII, M ^{[1
]}

UCHIDA, M ^{[1
]}

机构：

[1] NEC CORP,OPTOELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 16期

关键词：

D O I：

10.1063/1.97630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1007 / 1009

页数：3

共 10 条

[1] GAAS AND ALGAAS ANISOTROPIC FINE PATTERN ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM
ASAKAWA, K
SUGATA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 402 - 405
[2] SHORT-CAVITY GAALAS LASER BY WET CHEMICAL ETCHING
BOUADMA, N
RIOU, J
BOULEY, JC
[J]. ELECTRONICS LETTERS, 1982, 18 (20) : 879 - 880
[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
COLDREN, LA
IGA, K
MILLER, BI
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683
[4] CALCULATED THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS
DUTTA, NK
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7211 - 7214
[5] HIGH-QUANTUM-EFFICIENCY LOW-THRESHOLD MICROCLEAVED ALXGA1-XAS LASERS
LEVINE, BF
VANDERZIEL, JP
LOGAN, RA
BETHEA, CG
[J]. ELECTRONICS LETTERS, 1982, 18 (16) : 690 - 691
[6] LOW-THRESHOLD MBE GAAS/ALGAAS QUANTUM WELL LASERS WITH DRY-ETCHED MIRRORS
MANNOH, M
YUASA, T
ASAKAWA, K
SHINOZAKI, K
ISHII, M
[J]. ELECTRONICS LETTERS, 1985, 21 (17) : 769 - 770
[7] PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY MOLECULAR-BEAM EPITAXY
MANNOH, M
YUASA, T
NARITSUKA, S
SHINOZAKI, K
ISHII, M
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 728 - 731
[8] GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING
MERZ, JL
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3503 - 3509
[9] DRY-ETCHED-CAVITY PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS
YUASA, T
MANNOH, M
ASAKAWA, K
SHINOZAKI, K
ISHII, M
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (12) : 748 - 750
[10] YUASA T, UNPUB

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