ION-BEAM ASSISTED ETCHING FOR GAAS DEVICE APPLICATIONS

被引：32
作者：
LINCOLN, GA
GEIS, MW
MAHONEY, LJ
CHU, A
VOJAK, BA
NICHOLS, KB
PIACENTINI, WJ
EFREMOW, N
LINDLEY, WT
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期
关键词：
D O I：
10.1116/1.571483
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：786 / 789
页数：4
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