CAPTURE CROSS-SECTION AND DENSITY OF DEEP GAP STATES IN A-SIHX SCHOTTKY-BARRIER STRUCTURES

被引:13
作者
ABELES, B
WRONSKI, CR
GOLDSTEIN, Y
CODY, GD
机构
关键词
D O I
10.1016/0038-1098(82)91043-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:251 / 253
页数:3
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共 16 条
[1]  
ABELES B, 1981, 1981 P AIP TOP C TET, P298
[2]   OPTICAL-ABSORPTION OF SIH0.16 FILMS NEAR THE OPTICAL GAP [J].
CODY, GD ;
ABELES, B ;
WRONSKI, CR ;
BROOKS, B ;
LANFORD, WA .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :463-468
[3]  
DRESNER J, 1981, 1981 P AIP TOP C TET, P317
[4]   CARRIER COLLECTION EFFICIENCY OF A-SIHX SCHOTTKY-BARRIER SOLAR-CELLS [J].
GUTKOWICZKRUSIN, D ;
WRONSKI, CR ;
TIEDJE, T .
APPLIED PHYSICS LETTERS, 1981, 38 (02) :87-89
[5]  
GUTKOWICZKRUSIN D, UNPUB J APPL PHYS
[6]   PHOTOELECTROMAGNETIC EFFECT IN AMORPHOUS-SILICON [J].
MOORE, AR .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :327-330
[7]  
MOUSTAKAS TD, UNPUB APPL PHYS LETT
[8]  
Rose A, 1963, CONCEPTS PHOTOCONDUC
[9]   TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN A-SI [J].
SPEAR, WE ;
LOVELAND, RJ ;
ALSHARBA.A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (03) :410-422
[10]   LUMINESCENCE AND ELECTRON-SPIN-RESONANCE STUDIES OF DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].
STREET, RA ;
BIEGELSEN, DK .
SOLID STATE COMMUNICATIONS, 1980, 33 (12) :1159-1162