EPR STUDY OF DEFECTS IN NEUTRON-IRRADIATED SILICON - QUENCHED-IN ALIGNMENT UNDER (110)-UNIAXIAL STRESS

被引：123

作者：

LEE, YH ^{[1
]}

CORBETT, JW ^{[1
]}

机构：

[1] SUNY, DEPT PHYS, ALBANY, NY 12222 USA

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.9.4351

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4351 / 4361

页数：11

共 16 条

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[2]

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VOOK, FL ;

BORDERS, JA .

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[4]

CORBETT JW, 1966, ELECTRON RADIATION D

[5]

ELKIN EL, 1968, PHYS REV, V174, P88

[6] SPIN-1 CENTERS IN NEUTRON-IRRADIATED SILICON [J].

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NEWELL, GS .

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[7]

Kaplyanskii A., 1964, Opt. Spectrosc, V16, P329

[8]

Lee Y.H., 1972, Radiat. Eff., V15, P77, DOI [10.1080/00337577208232584, DOI 10.1080/00337577208232584]

[9] EPR STUDIES IN NEUTRON-IRRADIATED SILICON - NEGATIVE CHARGE STATE OF A NONPLANAR 5-VACANCY CLUSTER (V5-) [J].

LEE, YH ;

CORBETT, JW .

PHYSICAL REVIEW B, 1973, 8 (06) :2810-2826

[10] ELECTRON SPIN RESONANCE IN NEUTRON-IRRADIATED SILICON [J].

NISENOFF, M ;

FAN, HY .

PHYSICAL REVIEW, 1962, 128 (04) :1605-&

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