MAGNESIUM-DOPING AND CALCIUM-DOPING BEHAVIOR IN MOLECULAR-BEAM EPITAXIAL-III-V COMPOUNDS

被引：134

作者：

WOOD, CEC ^{[1
]}

DESIMONE, D ^{[1
]}

SINGER, K ^{[1
]}

WICKS, GW ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1063/1.331248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4230 / 4235

页数：6

共 16 条

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[7] VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS AND GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 604 - 606
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[10] STRONGLY QUENCHED DEFORMATION POTENTIALS OF MN ACCEPTOR IN GAAS
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