MAGNESIUM-DOPING AND CALCIUM-DOPING BEHAVIOR IN MOLECULAR-BEAM EPITAXIAL-III-V COMPOUNDS

被引：134

作者：

WOOD, CEC ^{[1
]}

DESIMONE, D ^{[1
]}

SINGER, K ^{[1
]}

WICKS, GW ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 06期

关键词：

D O I：

10.1063/1.331248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4230 / 4235

页数：6

共 16 条

[1] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5118-5123

[2]

DESIMONE D, UNPUB

[3]

HONIG RE, 1969, RCA REV, V30, P2

[4]

Ilegems M., 1975, J APPL PHYS, V46, P3059

[5]

ILEGEMS M, 1977, J APPL PHYS, V48, P1279

[6] GROWTH AND DOPING KINETICS IN MOLECULAR-BEAM EPITAXY [J].

JOYCE, BA ;

FOXON, CT .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :17-23

[7] VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS AND GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

KIRCHNER, PD ;

WOODALL, JM ;

FREEOUF, JL ;

WOLFORD, DJ ;

PETTIT, GD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :604-606

[8]

MALIK RJ, 1981, 3RD INT MOL BEAM EP

[9]

NAGANUMA M, 1975, APPL PHYS LETT, V27, P3413

[10] STRONGLY QUENCHED DEFORMATION POTENTIALS OF MN ACCEPTOR IN GAAS [J].

SCHAIRER, W ;

SCHMIDT, M .

PHYSICAL REVIEW B, 1974, 10 (06) :2501-2506

← 1 2 →