MODELING OF SUBMICROMETER GATE FIELD-EFFECT TRANSISTORS

被引：0
|
作者：
CARNEZ, B
CAPPY, A
CAPPY, A
SALMER, G
CONSTANT, E
机构：
来源：
ACTA ELECTRONICA | 1980年 / 23卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：165 / 183
页数：19
相关论文
共 50 条
  • [1] MODELING OF SUBMICROMETER GATE GAAS FIELD-EFFECT TRANSISTORS
    SALMER, G
    FAUQUEMBERGUE, R
    LEFEBVRE, M
    CAPPY, A
    ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS, 1988, 43 (7-8): : 405 - 414
  • [2] MODELING OF SUBMICROMETER GATE GAAS FIELD-EFFECT TRANSISTORS
    SALMER, G
    FAUQUEMBERGUE, R
    LEFEBVRE, M
    CAPPY, A
    ONDE ELECTRIQUE, 1991, 71 (03): : 53 - 61
  • [3] NOISE MODELING IN SUBMICROMETER-GATE TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS
    CAPPY, A
    VANOVERSCHELDE, A
    SCHORTGEN, M
    VERSNAEYEN, C
    SALMER, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2787 - 2796
  • [4] MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS
    CARNEZ, B
    CAPPY, A
    KASZYNSKI, A
    CONSTANT, E
    SALMER, G
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 784 - 790
  • [5] COMPARISON OF MEASUREMENT TECHNIQUES FOR GATE SHORTENING IN SUBMICROMETER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    BHATTACHARYA, P
    BARI, M
    RAO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (08): : 3409 - 3413
  • [6] Low-Cost Submicrometer Organic Field-Effect Transistors
    Scheinert, Susanne
    Paasch, Gernot
    Hoerselmann, Ingo
    Herasimovich, Andrei
    ORGANIC ELECTRONICS, 2010, 223 : 155 - 188
  • [7] Gate insulators in organic field-effect transistors
    Veres, J
    Ogier, S
    Lloyd, G
    de Leeuw, D
    CHEMISTRY OF MATERIALS, 2004, 16 (23) : 4543 - 4555
  • [8] Gate current modeling for insulating gate III-N heterostructure field-effect transistors
    Clarke, FW
    Ho, FD
    Khan, MA
    Simin, G
    Yang, J
    Gaska, R
    Shur, MS
    Deng, JY
    Karmalkar, S
    GAN AND RELATED ALLOYS-2002, 2003, 743 : 561 - 566
  • [9] NEW APPROACH TO THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS
    ELMANSY, YA
    BOOTHROYD, AR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 241 - 253
  • [10] SIMPLE ANALYTIC APPROXIMATIONS FOR THE DC CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS WITH SUBMICROMETER GATELENGTHS AND LOW GATE CUTOFF VOLTAGES
    BARNA, A
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1979, 33 (05): : 226 - 228
12345