GALLIUM-ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS ON SILICON

被引：536

作者：

FANG, SF ^{[1
]}

ADOMI, K ^{[1
]}

IYER, S ^{[1
]}

MORKOC, H ^{[1
]}

ZABEL, H ^{[1
]}

CHOI, C ^{[1
]}

OTSUKA, N ^{[1
]}

机构：

[1] PURDUE UNIV, SCH MAT ENGN, W LAFAYETTE, IN 47907 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期

关键词：

D O I：

10.1063/1.346284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The physics of the growth mechanisms, characterization of epitaxial structures and device properties of GaAs and other compound semiconductors on Si are reviewed in this paper. The nontrivial problems associated with the heteroepitaxial growth schemes and methods that are generally applied in the growth of lattice mismatched and polar on nonpolar material systems are described in detail. The properties of devices fabricated in GaAs and other compound semiconductors grown on Si substrates are discussed in comparison with those grown on GaAs substrates. The advantages of GaAs and other compound semiconductors on Si, namely, the low cost, superior mechanical strength, and thermal conductivity, increased wafer area, and the possibility of monolithic integration of electronic and optical devices are also discussed.

引用

页码：R31 / R58

页数：28

共 182 条

[1] CONTROL OF DISLOCATIONS IN GAAS GROWN ON SI(211) BY MOLECULAR-BEAM EPITAXY [J].