ION-IMPLANTED GAAS X-BAND POWER FETS

被引：16
|
作者：
DOERBECK, FH
MACKSEY, HM
BREHM, GE
FRENSLEY, WR
机构：
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 18期
关键词：
D O I：
10.1049/el:19790414
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：576 / 578
页数：3
相关论文
共 50 条
  • [21] Design of X-band GaAs Power Amplifier
    Xu, Hui
    Li, Mimi
    Xie, Yifang
    Huang, Yonghui
    2015 IEEE 6TH INTERNATIONAL SYMPOSIUM ON MICROWAVE, ANTENNA, PROPAGATION, AND EMC TECHNOLOGIES (MAPE), 2015, : 521 - 524
  • [22] LOW-NOISE ION-IMPLANTED INP FETS
    SLEGER, KJ
    DIETRICH, HB
    BARK, ML
    SWIGGARD, EM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1031 - 1034
  • [23] ENHANCEMENT-MODE ION-IMPLANTED INP FETS
    GLEASON, KR
    DIETRICH, HB
    BARK, ML
    HENRY, RL
    ELECTRONICS LETTERS, 1978, 14 (19) : 643 - 644
  • [24] RAPID ANNEALING OF ION-IMPLANTED GAAS
    WESCH, W
    GOTZ, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (02): : 745 - 766
  • [25] ANNEALING OF EXPANSION IN ION-IMPLANTED GAAS
    HANAZAWA, T
    YAMAGUCH.J
    GAMO, K
    ITOH, N
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) : 1487 - 1488
  • [26] REDUCTION OF LONG-TERM TRANSIENT RADIATION RESPONSE IN ION-IMPLANTED GAAS-FETS
    ANDERSON, WT
    SIMONS, M
    KING, EE
    DIETRICH, HB
    LAMBERT, RJ
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1533 - 1538
  • [27] Structural Changes in Ion-Implanted GaAs
    Akimov, A. N.
    Vlasukova, L. A.
    Journal of Friction and Wear, 1994, 15 (3-6)
  • [28] CAPLESS ANNEALING OF ION-IMPLANTED GAAS
    SIU, DP
    IMMORLICA, AA
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 722 - 722
  • [29] ION-IMPLANTED SILICON PROFILES IN GAAS
    LEE, DH
    MALBON, RM
    APPLIED PHYSICS LETTERS, 1977, 30 (07) : 327 - 329
  • [30] CHROMIUM REDISTRIBUTION IN ION-IMPLANTED GAAS
    YEE, CML
    NICHOLS, KB
    FEDDERS, PA
    WOLFE, CM
    PARK, YS
    SOLID-STATE ELECTRONICS, 1984, 27 (05) : 453 - 457
12345