UNIFIED APPARENT BANDGAP NARROWING IN NORMAL-TYPE AND PARA-TYPE SILICON

In the literature, separate models exist for the apparent bandgap narrowing in n- and p-type Si, yielding a smaller bandgap narrowing in n-type than in p-type Si. Using a recently-published model, which describes both the majority and the minority carrier mobility, we have recalculated the apparent bandgap narrowing from the measurements upon which the bandgap narrowing models mentioned above are based. The results of this new interpretation show no difference in apparent bandgap narrowing in n- and p-type Si. A function describing the unified bandgap narrowing is presented.