INFRARED OPTICAL CHARACTERIZATION OF INAS/GA1-XINXSB SUPERLATTICES

被引：99
|
作者：
MILES, RH [1 ]
CHOW, DH [1 ]
SCHULMAN, JN [1 ]
MCGILL, TC [1 ]
机构：
[1] CALTECH,TJ WATSON SR LAB APPL PHYS,PASADENA,CA 91125
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 08期
关键词：
D O I：
10.1063/1.103425
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InAs/Ga1-xInxSb superlattices have been examined by photoluminescence, photoconductivity, and infrared optical transmission. Samples display clear photoconductive thresholds at energies in agreement with band gaps derived from photoluminescence. Far-infrared energy gaps (8-14 μm and beyond) are obtained for InAs/Ga0.75In0.25Sb superlattices with periods <75 Å, in good agreement with gaps calculated from a simple two-band model. An absorption coefficient of ∼2000 cm-1 at 10 μm is measured in a superlattice with an energy gap of 11.4 μm. The magnitude and shape of this absorption edge is comparable to that of bulk Hg1-xCdxTe, suggesting that infrared detectors based on InAs/Ga1-xInxSb superlattices may be competitive in the 8-14 μm range and beyond.
引用
收藏
页码：801 / 803
页数：3
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