DEMONSTRATION OF THE EFFECTS OF INTERFACE STRAIN ON BAND OFFSETS IN LATTICE-MATCHED-III-V SEMICONDUCTOR SUPERLATTICES

被引：17
作者：
NELSON, JS
KURTZ, SR
DAWSON, LR
LOTT, JA
机构：
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 06期
关键词：
D O I：
10.1063/1.103626
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A first principles total energy self-consistent pseudopotential calculation is used to predict the band offset in the lattice-matched superlattice InAs/Al0.8Ga0.2As0.14Sb0.86. We find that inclusion of interface strain changes the character of the band offset from nominally type II to strongly type II. The predicted band offset at the minimum energy configuration is in excellent agreement with the value determined from infrared photoluminescence measurements.
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页码：578 / 580
页数：3
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