GENERAL THEORY OF IMPURITY DIFFUSION IN SEMICONDUCTORS VIA VACANCY MECHANISM

被引：79
作者：
HU, SM
机构：
来源：
PHYSICAL REVIEW | 1969年 / 180卷 / 03期
关键词：
D O I：
10.1103/PhysRev.180.773
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：773 / +
页数：1
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