GENERAL THEORY OF IMPURITY DIFFUSION IN SEMICONDUCTORS VIA VACANCY MECHANISM

被引：79

作者：

HU, SM

机构：

来源：

PHYSICAL REVIEW | 1969年 / 180卷 / 03期

关键词：

D O I：

10.1103/PhysRev.180.773

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：773 / +

页数：1

共 38 条

[1]

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[2]

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[3]

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[5]

DEGROOT SR, 1962, NONEQUILIBRIUM THERM, P64

[6]

DINGLE RB, 1955, PHILOS MAG, V46, P831

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PHYSICAL REVIEW, 1954, 94 (06) :1531-1540

[8]

DUNLAP WC, 1954, PHYS REV, V96, P822

[9] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].

FAIRFIEL.JM ;

MASTERS, BJ .

[10] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS INTO GERMANIUM [J].

FULLER, CS .

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