HOT-CARRIER RELIABILITY IN SUBMICRON PMOSFETS

被引：0
|
作者：
KOYANAGI, M
HUANG, T
LEWIS, A
CHEN, JY
机构：
来源：
1989 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS: PROCEEDINGS OF TECHNICAL PAPERS | 1989年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：312 / 316
页数：5
相关论文
共 50 条
  • [41] EFFECT OF PLASMA POLY-ETCH ON EFFECTIVE CHANNEL-LENGTH AND HOT-CARRIER RELIABILITY IN SUBMICRON TRANSISTORS
    LI, XY
    DIVAKARUNI, R
    HSU, JT
    PRABHAKAR, V
    AUM, P
    CHAN, D
    VISWANATHAN, CR
    IEEE ELECTRON DEVICE LETTERS, 1994, 15 (04) : 140 - 141
  • [42] Hot-carrier effects in deep submicron thin film SOI MOSFETs
    Renn, SH
    Pelloie, JL
    Balestra, F
    IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 877 - 880
  • [43] RECOVERY OF SUBMICROMETER PMOSFETS FROM HOT-CARRIER DEGRADATION BY HIGH-FIELD INJECTION
    ZHANG, JF
    TAYLOR, S
    ECCLESTON, W
    BARLOW, K
    ELECTRONICS LETTERS, 1993, 29 (12) : 1097 - 1099
  • [44] Channel-width dependent hot-carrier degradation of thin-gate pMOSFETs
    Lee, Y.-H.
    Wu, K.
    Linton, T.
    Mielke, N.
    Hu, S.
    Wallace, B.
    Annual Proceedings - Reliability Physics (Symposium), 2000, : 77 - 82
  • [45] On the methodology of assessing hot-carrier reliability of analog circuits
    Le, H
    Marcoux, PJ
    Jiang, WJ
    Chung, JE
    2000 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2000, : 20 - 23
  • [46] HOT-CARRIER DEGRADATION OF SINGLE-DRAIN PMOSFETS WITH DIFFERING SIDEWALL SPACER THICKNESSES
    AHN, ST
    HAYASHIDA, S
    IGUCHI, K
    TAKAGI, J
    WATANABE, T
    SAKIYAMA, K
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (04) : 211 - 213
  • [47] Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressing
    Qin, WH
    Chim, WK
    Chan, DSH
    Lou, CL
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (05) : 453 - 459
  • [48] Direct parameter extraction for hot-carrier reliability simulation
    Natl Microelectronics Research Cent, , Cork, Ireland
    Microelectron Reliab, 10-11 (1437-1440):
  • [49] HOT-CARRIER-INJECT OXIDE REGION IN FRONT AND BACK INTERFACES IN ULTRA-THIN (50 NM), FULLY DEPLETED, DEEP-SUBMICRON NMOS AND PMOSFETS/SIMOX AND THEIR HOT-CARRIER IMMUNITY
    TSUCHIYA, T
    OHNO, T
    KADO, Y
    KAI, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2351 - 2356
  • [50] Two dimensional computer simulation and analysis on hot-carrier degradation of submicron MOSFET
    Zhang, Xisheng
    He, Xinping
    Li, Zhijian
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (03): : 148 - 153
12345