ORIGIN OF LARGE DARK SPOTS IN ALXGA1-XAS-GAAS HETEROSTRUCTURE PHOTOLUMINESCENCE

被引:5
作者
HENRY, CH [1 ]
LOGAN, RA [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.89648
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:203 / 205
页数:3
相关论文
共 3 条
[1]   ELASTICALLY ENHANCED NONRADIATIVE RECOMBINATION AT ALXGA1-XAS-GAAS HETERO-INTERFACE [J].
JOHNSTON, WD ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1976, 28 (03) :140-142
[2]   MACROSCOPIC DETERIORATION OF FLUORESCENCE FROM ALCHIGA1-CHIAS-GAAS DH MATERIAL FOLLOWING MICROSCOPIC PHYSICAL DAMAGE [J].
JOHNSTON, WD .
APPLIED PHYSICS LETTERS, 1974, 24 (10) :494-496
[3]   ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION [J].
LOGAN, RA ;
SCHWARTZ, B ;
SUNDBURG, WJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1385-1390